TK8A25DA,S4X

Name: TK8A25DA,S4X
Brand: Toshiba Semiconductor and Storage

模拟与电源

PB-F POWER MOSFET TRANSISTOR TO

在产TO-220-3 Full Pack模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	500mOhm @ 3.8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 100 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 1mA

漏源电压	250 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
最大功耗	30W (Tc)

工作温度	150°C