通用
| Rds On (Max) @ Id, Vgs | 120mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 10 V |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 系列 | U-MOSIV |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |