TK6P53D(T6RSS-Q)

Name: TK6P53D(T6RSS-Q)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 525V 6A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.3Ohm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	π-MOSVII
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.4V @ 1mA

漏源电压	525 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
最大功耗	100W (Tc)

工作温度	150°C (TJ)