TK6A65D(STA4,Q,M)

Name: TK6A65D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 650V 6A TO220SIS

在产TO-220-3 Full Pack模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.11Ohm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 25 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
系列	π-MOSVII
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
最大功耗	45W (Tc)

工作温度	150°C(TJ)