TK62N60X,S1F

Name: TK62N60X,S1F
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 600V 61.8A TO247

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	40mOhm @ 21A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 300 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
系列	DTMOSIV-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.5V @ 3.1mA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	61.8A (Ta)
最大功耗	400W (Tc)

工作温度	150°C (TJ)