TK55S10N1,LXHQ

Name: TK55S10N1,LXHQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 100V 55A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6.5mOhm @ 27.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVIII-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 500µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
最大功耗	157W (Tc)

工作温度	175°C