TK3R1E04PL,S1X

Name: TK3R1E04PL,S1X
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 40V 100A TO220

在产TO-220-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.8mOhm @ 30A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4670 pF @ 20 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
系列	U-MOSIX-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 500µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
最大功耗	87W (Tc)

工作温度	175°C (TJ)