TK3P50D,RQ(S

Name: TK3P50D,RQ(S
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 500V 3A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3Ohm @ 1.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.4V @ 1mA

漏源电压	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
最大功耗	60W (Tc)

工作温度	150°C (TJ)