TK1R4S04PB,LXHQ

Name: TK1R4S04PB,LXHQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 40V 120A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.9mOhm @ 60A, 6V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSIX-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 500µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
最大功耗	180W (Tc)

工作温度	175°C