TK16E60W5,S1VX

Name: TK16E60W5,S1VX
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 600V 15.8A TO220

在产TO-220-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	230mOhm @ 7.9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 300 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
系列	DTMOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 790µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	15.8A (Ta)
最大功耗	130W (Tc)

工作温度	150°C (TJ)