TK160F10N1L,LXGQ

Name: TK160F10N1L,LXGQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 100V 160A TO220SM

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	10100 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVIII-H
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 1mA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
最大功耗	375W (Tc)

工作温度	175°C