TK15S04N1L,LXHQ

Toshiba Semiconductor and Storage

TK15S04N1L,LXHQ

Datasheet

模拟与电源

MOSFET N-CH 40V 15A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs17.8mOhm @ 7.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds610 pF @ 10 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
系列U-MOSVIII-H
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 100µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C15A (Ta)
最大功耗46W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装DPAK+

环境

工作温度175°C