通用
| Rds On (Max) @ Id, Vgs | 410mOhm @ 6.8A, 10V |
|---|---|
| 基础料号 | TK14A45 |
| FET Type | N-Channel |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 410mOhm @ 6.8A, 10V |
|---|---|
| 基础料号 | TK14A45 |
| FET Type | N-Channel |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| 漏源电压 | 450 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13.5A |
| 封装 | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| 供应商器件封装 | TO-220SIS |