TK12A50W,S5X

Name: TK12A50W,S5X
Brand: Toshiba Semiconductor and Storage

模拟与电源

PB-F POWER MOSFET TRANSISTOR TO

在产TO-220-3 Full Pack模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
包装	Tube
产品状态	在产
系列	DTMOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.7V @ 600µA

漏源电压	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
最大功耗	35W (Tc)

Package / Case	TO-220-3 Full Pack
供应商器件封装	TO-220SIS

工作温度	150°C