TK10Q60W,S1VQ

Name: TK10Q60W,S1VQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 600V 9.7A IPAK

在产TO-251-3 Stub Leads, IPak模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	430mOhm @ 4.9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
系列	DTMOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.7V @ 500µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
最大功耗	80W (Tc)

工作温度	150°C (TJ)