TK100L60W,VQ

Name: TK100L60W,VQ
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 600V 100A TO3P

在产TO-3PL模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	18mOhm @ 50A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 30 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
系列	DTMOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.7V @ 5mA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
最大功耗	797W (Tc)

工作温度	150°C (TJ)