TJ15P04M3,RQ(S

Name: TJ15P04M3,RQ(S
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 40V 15A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	36mOhm @ 7.5A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVI
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 100µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
最大功耗	29W (Tc)

工作温度	150°C (TJ)