SSM6P69NU,LF

Toshiba Semiconductor and Storage

SSM6P69NU,LF

Datasheet

模拟与电源

MOSFET 2P-CH 20V 4A 6DFN

在产6-WDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs45mOhm @ 3.5A, 10V
基础料号SSM6P69
配置2 P-Channel (Dual)
FET FeatureLogic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs6.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 1mA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Power - Max1W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-WDFN Exposed Pad
供应商器件封装6-µDFN (2x2)

环境

工作温度150°C