通用
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
|---|---|
| 基础料号 | SSM6P39 |
| 配置 | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |