SSM6N813R,LXHF

Toshiba Semiconductor and Storage

SSM6N813R,LXHF

Datasheet

模拟与电源

MOSFET 2N-CH 100V 3.5A 6TSOPF

在产6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs112mOhm @ 3.5A, 10V
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds242pF @ 15V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 100µA

电气

漏源电压100V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Power - Max1.5W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
供应商器件封装6-TSOP-F

环境

GradeAutomotive
工作温度175°C
QualificationAEC-Q101