SSM6N7002CFU,LF

Toshiba Semiconductor and Storage

SSM6N7002CFU,LF

Datasheet

模拟与电源

MOSFET 2N-CH 60V 0.17A US6

在产6-TSSOP, SC-88, SOT-363模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.9Ohm @ 100mA, 10V
基础料号SSM6N7002
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds17pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C170mA
Power - Max285mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-TSSOP, SC-88, SOT-363
供应商器件封装US6

环境

工作温度150°C (TJ)