SSM6N42FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6N42FE(TE85L,F)

模拟与电源

MOSFET 2N-CH 20V 0.8A ES6

停产/老旧SOT-563, SOT-666模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs240mOhm @ 500mA, 4.5V
基础料号SSM6N42
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C800mA
Power - Max150mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
供应商器件封装ES6

环境

工作温度150°C (TJ)