SSM6N37FE,LM

Toshiba Semiconductor and Storage

SSM6N37FE,LM

Datasheet

模拟与电源

MOSFET 2N-CH 20V 0.25A ES6

在产SOT-563, SOT-666模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.2Ohm @ 100mA, 4.5V
基础料号SSM6N37
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Input Capacitance (Ciss) (Max) @ Vds12pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C250mA
Power - Max150mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
供应商器件封装ES6

环境

工作温度150°C (TJ)