SSM6N357R,LF

Toshiba Semiconductor and Storage

SSM6N357R,LF

Datasheet

模拟与电源

MOSFET 2N-CH 60V 0.65A 6TSOPF

在产6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.8Ohm @ 150mA, 5V
基础料号SSM6N357
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 12V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C650mA (Ta)
Power - Max1.5W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
供应商器件封装6-TSOP-F

环境

工作温度150°C