SSM6N15AFE,LM

Name: SSM6N15AFE,LM
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET 2N-CH 30V 0.1A ES6

在产SOT-563, SOT-666模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4Ohm @ 10mA, 4V
基础料号	SSM6N15
配置	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	13.5pF @ 3V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5V @ 100µA

漏源电压	30V
Current - Continuous Drain (Id) @ 25°C	100mA
Power - Max	150mW

封装	Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT)
Package / Case	SOT-563, SOT-666
供应商器件封装	ES6

工作温度	150°C (TJ)