SSM6L820R,LXHF

Toshiba Semiconductor and Storage

SSM6L820R,LXHF

Datasheet

模拟与电源

MOSFET N/P-CH 30V/20V 4A 6TSOPF

在产6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
配置N and P-Channel
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 4.5V, 6.7nC @4.5V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 15V, 480pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA, 1.2V @ 1mA

电气

漏源电压30V, 20V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Power - Max1.4W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
供应商器件封装6-TSOP-F

环境

GradeAutomotive
工作温度150°C
QualificationAEC-Q101