SSM6L39TU,LF

Toshiba Semiconductor and Storage

SSM6L39TU,LF

Datasheet

模拟与电源

MOSFET N/P-CH 20V 0.8A UF6

在产6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs143mOhm @ 600MA, 4V
基础料号SSM6L39
配置N and P-Channel
FET FeatureLogic Level Gate, 1.8V Drive
Input Capacitance (Ciss) (Max) @ Vds268pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C800mA
Power - Max500mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
供应商器件封装UF6

环境

工作温度150°C (TJ)