SSM6L35FE,LM

Name: SSM6L35FE,LM
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N/P-CH 20V 0.18A/0.1A ES6

在产SOT-563, SOT-666模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
基础料号	SSM6L35
配置	N and P-Channel
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 3V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1V @ 1mA

漏源电压	20V
Current - Continuous Drain (Id) @ 25°C	180mA, 100mA
Power - Max	150mW

工作温度	150°C (TJ)