SSM6L16FETE85LF

Toshiba Semiconductor and Storage

SSM6L16FETE85LF

Datasheet

模拟与电源

MOSFET N/P-CH 20V 0.1A ES6

已停产SOT-563, SOT-666模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3Ohm @ 10mA, 4V
基础料号SSM6L16
配置N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds9.3pF @ 3V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 100µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C100mA
Power - Max150mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
供应商器件封装ES6

环境

工作温度150°C (TA)