SSM6L14FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6L14FE(TE85L,F)

Datasheet

模拟与电源

MOSFET N/P-CH 20V 0.8A ES6

在产SOT-563, SOT-666模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
基础料号SSM6L14
配置N and P-Channel
FET FeatureLogic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 10V, 110pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C800mA (Ta), 720mA (Ta)
Power - Max150mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
供应商器件封装ES6

环境

工作温度150°C