SSM6L12TU,LF

Toshiba Semiconductor and Storage

SSM6L12TU,LF

Datasheet

模拟与电源

MOSFET N/P-CH 30V/20V 0.5A UF6

在产6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
基础料号SSM6L12
配置N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds245pF @ 10V, 218pF @ 10V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 100µA

电气

漏源电压30V, 20V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Power - Max500mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
供应商器件封装UF6

环境

工作温度150°C