SSM6L09FUTE85LF

Toshiba Semiconductor and Storage

SSM6L09FUTE85LF

Datasheet

模拟与电源

MOSFET N/P-CH 30V 0.4A/0.2A US6

已停产6-TSSOP, SC-88, SOT-363模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs700mOhm @ 200MA, 10V
基础料号SSM6L09
配置N and P-Channel
FET FeatureLogic Level Gate
Input Capacitance (Ciss) (Max) @ Vds20pF @ 5V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.8V @ 100µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C400mA, 200mA
Power - Max300mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-TSSOP, SC-88, SOT-363
供应商器件封装US6

环境

工作温度150°C (TJ)