通用
| Rds On (Max) @ Id, Vgs | 39.1mOhm @ 2A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 15 V |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | +12V, -8V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |