SSM6K211FE,LF

Name: SSM6K211FE,LF
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 20V 3.2A ES6

在产SOT-563, SOT-666模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	47mOhm @ 2A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSIII
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1V @ 1mA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
最大功耗	500mW (Ta)

工作温度	150°C (TJ)