SSM6K204FE,LF

Name: SSM6K204FE,LF
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 20V 2A ES6

在产SOT-563, SOT-666模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	126mOhm @ 1A, 4V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1V @ 1mA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
最大功耗	500mW (Ta)

工作温度	150°C