SSM6J825R,LF

Name: SSM6J825R,LF
Brand: Toshiba Semiconductor and Storage

模拟与电源

P-CH MOSFET -30V, -20/+10V, -4A

在产6-SMD, Flat Leads模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	45mOhm @ 4A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	492 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
最大功耗	1.5W (Ta)

工作温度	150°C