通用
| Rds On (Max) @ Id, Vgs | 31mOhm @ 3A, 8.5V |
|---|---|
| 基础料号 | SSM6J771 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | U-MOSVI |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |