SSM6J512NU,LF

Name: SSM6J512NU,LF
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 12V 10A 6UDFNB

在产6-WDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	16.2mOhm @ 4A, 8V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 6 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVII
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1V @ 1mA

漏源电压	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
最大功耗	1.25W (Ta)

工作温度	150°C (TJ)