SSM5H08TU,LF

Toshiba Semiconductor and Storage

SSM5H08TU,LF

Datasheet

模拟与电源

MOSFET N-CH 20V 1.5A UFV

在产6-SMD (5 Leads), Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs160mOhm @ 750mA, 4V
基础料号SSM5H08
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds125 pF @ 10 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
系列U-MOSIII
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 100µA

电气

漏源电压20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
最大功耗500mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD (5 Leads), Flat Lead
供应商器件封装UFV

环境

工作温度150°C