SSM5G10TU(TE85L,F)

Toshiba Semiconductor and Storage

SSM5G10TU(TE85L,F)

模拟与电源

MOSFET P-CH 20V 1.5A UFV

停产/老旧6-SMD (5 Leads), Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs213mOhm @ 1A, 4V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 10 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
系列U-MOSIII
技术MOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 1mA

电气

漏源电压20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
最大功耗500mW (Ta)

机械

封装Tape & Reel (TR)
Package / Case6-SMD (5 Leads), Flat Lead
供应商器件封装UFV

环境

工作温度150°C(TJ)