SSM3K35CT,L3F

Name: SSM3K35CT,L3F
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 20V 180MA CST3

在产SC-101, SOT-883模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
基础料号	SSM3K35
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.5 pF @ 3 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1V @ 1mA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)
最大功耗	100mW (Ta)

工作温度	150°C