SSM3K35AMFV,L3F

Name: SSM3K35AMFV,L3F
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 20V 250MA VESM

在产SOT-723模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.1Ohm @ 150mA, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	36 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSIII
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1V @ 100µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
最大功耗	500mW (Ta)

工作温度	150°C (TJ)