通用
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 12 V |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | π-MOSV |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |