SSM3K302T(TE85L,F)

Toshiba Semiconductor and Storage

SSM3K302T(TE85L,F)

模拟与电源

MOSFET N-CH 30V 3A TSM

停产/老旧TO-236-3, SC-59, SOT-23-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs71mOhm @ 2A, 4V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 10 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±12V

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
最大功耗700mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
供应商器件封装TSM

环境

工作温度150°C (TJ)