SSM3K127TU,LF

Toshiba Semiconductor and Storage

SSM3K127TU,LF

Datasheet

模拟与电源

MOSFET N-CH 30V 2A UFM

在产3-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs123mOhm @ 1A, 4V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds123 pF @ 15 V
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
最大功耗500mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case3-SMD, Flat Leads
供应商器件封装UFM

环境

工作温度150°C