SSM3J168F,LXHF

Name: SSM3J168F,LXHF
Brand: Toshiba Semiconductor and Storage

模拟与电源

SMOS LOW RON VDS:-60V VGSS:+10/

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.55Ohm @ 200mA, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVI
技术	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2V @ 1mA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
最大功耗	600mW (Ta)

封装	Tape & Reel (TR) Cut Tape (CT)