SSM3J168F,LF

Name: SSM3J168F,LF
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 60V 400MA S-MINI

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.9Ohm @ 100mA, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSVI
技术	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2V @ 1mA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
最大功耗	1.2W (Ta)

工作温度	150°C