SSM3J120TU,LF

Name: SSM3J120TU,LF
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 20V 4A UFM

在产3-SMD, Flat Leads模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	38mOhm @ 3A, 4V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds	1484 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
系列	U-MOSIV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 1mA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
最大功耗	500mW (Ta)

工作温度	150°C (TJ)