SSM3J112TU,LF

Name: SSM3J112TU,LF
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 30V 1.1A UFM

在产3-SMD, Flat Leads模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	390mOhm @ 500mA, 10V
基础料号	SSM3J112
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	86 pF @ 15 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1.8V @ 100µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
最大功耗	800mW (Ta)

工作温度	150°C