RN2109ACT(TPL3)

Toshiba Semiconductor and Storage

RN2109ACT(TPL3)

模拟与电源

TRANS PREBIAS PNP 50V 0.08A CST3

在产SC-101, SOT-883模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号RN2109
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusActive
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA

电气

Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector (Ic) (Max)80 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Power - Max100 mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSC-101, SOT-883
供应商器件封装CST3